Methods for removing an edge polymer from a substrate

ABSTRACT

A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

PRIORITY CLAIM

This divisional application claims priority under 37 CFR 1.53(b) of andclaims the benefit under 35 U.S.C. §120 to a commonly assigned patentapplication entitled “Apparatus for the removal of an edge polymer froma substrate and methods therefor,” by Yoon et al., application Ser. No.11/236,170 filed on Sep. 26, 2005, issued as U.S. Pat. No. 7,651,585, onJan. 26, 2010, all of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates in general to substrate manufacturingtechnologies and in particular to apparatus for the removal of an edgepolymer from a substrate and methods therefor.

In the processing of a substrate, e.g., a semiconductor substrate or aglass panel such as one used in flat panel display manufacturing, plasmais often employed. As part of the processing of a substrate for example,the substrate is divided into a plurality of dies, or rectangular areas,each of which will become an integrated circuit. The substrate is thenprocessed in a series of steps in which materials are selectivelyremoved (etching) and deposited. Control of the transistor gate criticaldimension (CD) on the order of a few nanometers is a top priority, aseach nanometer deviation from the target gate length may translatedirectly into the operational speed of these devices.

Areas of the hardened emulsion are then selectively removed, causingcomponents of the underlying layer to become exposed. The substrate isthen placed in a plasma processing chamber on a substrate supportstructure comprising a mono-polar or bi-polar electrode, called a chuckor pedestal. Appropriate etchant gases are then flowed into the chamberand struck to form a plasma to etch exposed areas of the substrate.

During the etch process, it is not uncommon for polymer byproducts (edgepolymers) to form on the top and bottom of a substrate bevel area. Bevelarea refers to a surface area on the perimeter of the substrate where nodies are present. In general, polymers that form on the substrate bevelduring the etch process are organic and may be composed of Carbon (C),Oxygen (O), Nitrogen (N), and/or Fluorine (F). However, as successivepolymer layers are deposited on the bevel edge area as the result ofseveral different etch processes, organic bonds that are normally strongand adhesive will eventually weaken and peel or flake off, often ontoanother substrate during transport. For example, substrates are commonlymoved in sets between plasma processing systems via substantially cleancontainers, often called cassettes. As a higher positioned substrate isrepositioned in the container, a portion of a polymer layer may fall ona lower substrate where dies are present, potentially affecting deviceyield.

A commonly known, relatively simple, and low-cost method of polymerremoval may be the use of an atmospheric (or high pressure) plasma jet(APPJ), which generally allows a plasma to be focused on a particularlocation on the substrate, thus minimizing potential damage to dies onthe substrate. An APPJ device generally mixes a large amount of an inertgas (e.g., He, etc.) with a small amount of a reactive gas (e.g., CF₄,O₂, etc.) in an annular volume (e.g., tube, cylinder, etc.) formedbetween an rf-powered electrode (along a longitudinal axis of thesource) and a grounded electrode. The generated plasma may then beforced out one end of the annular volume (plasma effluent) by pressurecaused by the influx of gases (gas influent). The shape and size of theplasma effluent may be controlled by adjusting the gas influentpressure, as well as the shape and size of the discharge orifice on theAPPJ device.

In addition, an APPJ may also be combined with a reactive ion etch (RIE)in order to remove polymer byproducts. In general, RIE combines bothchemical and ion processes in order to remove material from thesubstrate. Generally ions in the plasma enhance a chemical process bystriking the surface of the substrate, and breaking the chemical bondsof the atoms on the surface in order to make them more susceptible toreacting with the molecules of the chemical process. Operating atambient pressure conditions, atmospheric plasmas tend to relativelyinexpensive in comparison to low-pressure plasmas that requiresophisticated pumping systems to operate at near vacuum conditions.However, APPJ devices also tend to be susceptible to arcing.

An arc is generally a high power density short circuit which has theeffect of a miniature explosion. When arcs occur on or near the surfacesof the target material or chamber fixtures, substantial damage canoccur, such as local melting. Plasma arcs are generally caused by lowplasma impedance which results in a steadily increasing current flow. Ifthe resistance is low enough, the current will increase indefinitely(limited only by the power supply and impedance), creating a shortcircuit in which all energy transfer takes place. This may result indamage to the substrate as well as the plasma chamber. In order toinhibit arcing, relatively high plasma impedance generally must bemaintained. A common solution may be to limit the rate of ionization inthe plasma by using a large volume of inert gas at a relatively highflow rate. Another solution may be to position slots along thelongitudinal axis of the powered electrode with the same electricalpotential, in order to reduce the likelihood of arcing.

For example, in a common atmospheric plasma configuration, rf powercreates an electrical discharge between a power electrode and a set ofgrounded electrodes that causes a process gas such as O₂ to ionize.However, as the density of electrically charged species (i.e., ions,etc.) in the plasma increases (typically above 2%), the likelihood ofdestructive arcing at the exposed electrode also increases. Hence, mostatmospheric plasma processes typically also comprise mostlynon-electrically charged (inert) gas, such as He, which limitionization. In a polymer byproduct removal application, however, thelarge volume (high flow) of inert gas may make the use of atmosphericplasma economically impractical. For example, the substantial removal ofa polymer from just a 5 mm² surface area on the substrate may requireover 10 slm (standard liters per minute) of an inert gas. Thiscorresponds to the consumption of over 100 liters of the inert gas for asingle typical 300 mm substrate. Aside from the cost of obtainingsemi-conductor grade inert gas, storing such a large volume of gas in amanufacturing facility may be unworkable. Additionally, because therequired inert gas processing equipment may be costly, cleaning andrecycling the inert gas may be economically impractical.

Referring now to FIG. 1, a simplified diagram of an atmospheric plasmajet device, in which both the powered electrode and the ground electrodeare each configured on a cavity wall, is shown. Generally, an inert gas118 (e.g., He, etc.) and a process gas 116 (e.g., CF₄, etc.) are flowedinto sealed box 114 for pressurizing. The gases are, in turn, feed intoa discharge chamber cavity 110 through gas influent 115, at which pointa plasma is struck with an RF power source 108 and creates plasmaeffluent 104 from discharge orifice 117 at one end of cavity 110 toclean substrate 102. In general, the shape and diameter of dischargeorifice 117 may affect the corresponding shape of plasma effluent 104along both the lateral and longitudinal axis (e.g., laterally narrow andlongitudinally deep, laterally wide and longitudinally shallow, etc.).However, as previously stated, a large volume of inert gas may berequired to prevent the generation of arc 105 between powered electrode106 to grounded electrode 112.

Referring now to FIG. 2, a simplified diagram of an atmospheric plasmajet device, in which a powered electrode is configured as a center rodand a grounded electrode(s) is configured on a cavity inner surface, isshown. As before, generally, an inert gas 118 (e.g., He, etc.) and aprocess gas 116 (e.g., CF₄, etc.) are flowed into sealed box 114 forpressurizing. The gases are, in turn, feed into a discharge chambercavity 110 through gas influent 115, at which point plasma 104 is struckwith an RF power source 108 and creates plasma effluent 104 fromdischarge orifice 117 at one end of cavity 110 to clean substrate 102.In general, the shape and diameter of discharge orifice 117 may affectthe corresponding shape of plasma effluent 104 along both the lateraland longitudinal axis (e.g., laterally narrow and longitudinally deep,laterally wide and longitudinally shallow, etc.). However, as previouslystated, a large volume of inert gas may be required to prevent thegeneration of arc 105 between powered electrode 106 to groundedelectrode 112.

Referring now to FIG. 3, a simplified diagram of a substrate in which aset of edge polymers have been deposited on the planar backside isshown. As previously stated, during the etch process, it is not uncommonfor polymer byproducts (edge polymers) to form on the substrate. In thisexample, the polymer byproducts have been deposited on the planarbackside, that is, the side of the substrate away from the plasma. Forexample, the polymer thickness may be about 250 nm at about 70° 302, 270nm at about 45° 304, and about 120 nm at 0° 306. In general, the greaterthe thickness of the polymer, the higher the likeliness that a portionof the polymer may become dislodged and fall onto another substrate,potentially affecting manufacturing yield.

In view of the foregoing, there are desired apparatus for the removal ofan edge polymer from a substrate and methods therefore.

SUMMARY OF THE INVENTION

The invention relates, in an embodiment, to an apparatus generating aplasma for removing an edge polymer from a substrate. The embodimentincludes a powered electrode assembly, including a powered electrode, afirst dielectric layer, and a first wire mesh disposed between thepowered electrode and the first dielectric layer. The embodiment alsoincludes a grounded electrode assembly disposed opposite the poweredelectrode assembly so as to form a cavity wherein the plasma isgenerated, the first wire mesh being shielded from the plasma by thefirst dielectric layer when the plasma is present in the cavity, thecavity having an outlet at one end for providing the plasma to removethe edge polymer.

The invention relates, in an embodiment, to a method for generating aplasma for removing an edge polymer from a substrate. The methodincludes providing a powered electrode assembly, the powered electrodeassembly including a powered electrode, a first dielectric layer, and afirst wire mesh disposed between the powered electrode and the firstdielectric layer. The method also includes providing a groundedelectrode assembly disposed opposite the powered electrode assembly soas to form a cavity wherein the plasma is generated, the first wire meshbeing shielded from the plasma by the first dielectric layer when theplasma is present in the cavity, the cavity having an outlet at one endfor providing the plasma to remove the an edge polymer. The methodfurther includes introducing at least one inert gas and at least oneprocess gas into the cavity, and applying an rf field to the cavityusing the powered electrode to generate the plasma from the at least oneinert gas and the at least one process gas.

The invention relates, in an embodiment, to a method for generating aplasma for removing an edge polymer from a substrate. The methodincludes providing a powered electrode assembly, the powered electrodeassembly including a powered electrode, a first dielectric layer, and afirst wire mesh disposed between the powered electrode and the firstdielectric layer. The method further includes providing a groundedelectrode assembly disposed opposite the powered electrode assembly soas to form a cavity wherein the plasma is generated, the first wire meshbeing shielded from the plasma by the first dielectric layer when theplasma is present in the cavity, the cavity having an outlet at one endfor providing the plasma to remove the an edge polymer. The method alsoincludes applying an rf field to the cavity using the powered electrodeto generate the plasma from at least one inert gas and the at least oneprocess gas.

These and other features of the present invention will be described inmore detail below in the detailed description of the invention and inconjunction with the following figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 shows a simplified diagram of an atmospheric plasma jet device,in which both the powered electrode and the ground electrode are eachconfigured on a cavity wall;

FIG. 2 shows a simplified diagram of an atmospheric plasma jet device,in which a powered electrode is configured as a center rod and a groundelectrode(s) is configured on a cavity wall;

FIG. 3 shows a simplified diagram of a substrate in which a set of edgepolymers have been deposited on the planar backside;

FIG. 4 shows a simplified diagram of a DWM-APPJ device, which both thepowered electrode and the ground electrode are each configured on acavity wall, according to an embodiment of the invention;

FIG. 5 shows a simplified diagram of a DWM-APPJ device in which apowered electrode is configured as a center rod and a groundelectrode(s) is configured on a cavity inner surface, according to anembodiment of the invention;

FIG. 6 shows a simplified diagram of a set of DWM-APPJ devices, asdescribed in FIG. 5, according to an embodiment of the invention;

FIG. 7 shows a simplified diagram of a set of DWM-APPJ devices, asdescribed in FIG. 6, with an additional set of inert gas jets, accordingto an embodiment of the invention;

FIG. 8 shows a simplified diagram of a DWM-APPJ device, in which a setof wire mesh-dielectric sleeves is changeable, according to anembodiment of the invention; and

FIG. 9 shows a simplified method of optimally removing a edge polymerfrom a substrate with a DWM-APPJ device, according to an embodiment ofthe invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail with reference toa few preferred embodiments thereof as illustrated in the accompanyingdrawings. In the following description, numerous specific details areset forth in order to provide a thorough understanding of the presentinvention. It will be apparent, however, to one skilled in the art, thatthe present invention may be practiced without some or all of thesespecific details. In other instances, well known process steps and/orstructures have not been described in detail in order to notunnecessarily obscure the present invention.

While not wishing to be bound by theory, the inventor believes that anatmospheric pressure plasma jet device, in which a dielectric barrierand a wire mesh are positioned between at least one electrode and aplasma (DWM-APPJ), may minimize arcing at a relatively low (less thanabout 1 slm) inert gas flow rate, and hence may effectively remove anedge polymer from a substrate.

In general, arcing occurs when an over voltage is applied to thedischarge gap between electrodes, such that electron avalanches reach acritical stage where extremely fast streamer propagation becomespossible. As a result, micro discharge channels are formed. However,since the dielectric barrier also tends to act as an electret (generallya material that accumulates electrical charges on its surface), themicro discharge channels spread across the dielectric barrier intosurface discharges covering a much larger region than the originalchannel diameter. Due to charge build-up on the dielectric surface, thefield at the location of a micro discharge collapses within a fewnanoseconds after breakdown, thus terminating the current flow at thislocation. However, often this breakdown may also result in collapse ofthe plasma itself. In an advantageous way, the wire mesh prevents thiscollapse.

In general, electromagnetic waves, such as produced by an rf generator,do not penetrate through holes in a conducting surface like a wire meshthat are less than about a wavelength across. The generated rf field maybe attenuated in different amounts and to different degrees by alteringdiameter of the wire mesh holes. It is believed that the creation of asecondary electric field on the surface of the dielectric barrier by thewire mesh with properly sized holes helps to sustain a plasma withoutarcing at a substantially smaller inert gas flow rate. Thus, theaddition of at least one wire mesh between an electrode and a dielectricbarrier in a DWM-APPJ allows a plasma jet to be generated that maysubstantially remove polymer byproducts at a particular substratelocation, at relatively small inert gas flow rates (less than about 1slm). In addition, unlike previous APPJ configurations, DWM-APPJ doesnot require slots along the longitudinal axis of the powered electrode.Slots generally increase the size, complexity, and cost of an APPJ.

Generally, the tolerance of one wavelength of the rf is taken to be theapproximate cross over point between satisfactory and unsatisfactoryperformance. However, in general, holes or surface variations in thewire mesh must usually be less than a fraction of a wavelength across inorder not to impose unacceptable performance degradation. In addition,the wire mesh is generally not grounded in order to allow penetration ofthe rf field into the plasma.

In an embodiment, a dielectric barrier is positioned between a singleelectrode and a plasma. In an embodiment, a dielectric barrier ispositioned between all the electrodes and a plasma. In an embodiment, adielectric barrier is positioned between a powered electrode and aplasma. In an embodiment, a dielectric barrier is positioned between agrounded electrode and a plasma. In an embodiment, a wire mesh is placedbetween the dielectric barrier and an electrode. In an embodiment, awire mesh is placed between each dielectric barrier and electrode. In anembodiment, a wire mesh is placed between a dielectric barrier and apowered electrode. In an embodiment, a wire mesh is placed between adielectric barrier and a grounded electrode.

In an embodiment, the wire mesh comprises Copper (Cu). In an embodiment,the wire mesh comprises stainless steel. In an embodiment, the wire meshcomprises brass. In an embodiment, the wire mesh is galvanized. In anembodiment, the wire mesh is monofilament. In an embodiment, the wiremesh has a rectangular weave. In an embodiment, the wire mesh has ahexagon weave. In an embodiment, the dielectric comprises MYLAR™ In anembodiment, the dielectric comprises a ceramic. In an embodiment, thedielectric-comprises TEFLON™.

Referring now to FIG. 4, a simplified diagram of a DWM-APPJ device isshown, which both the powered electrode and the ground electrode areeach configured on a cavity wall, according to an embodiment of theinvention. In addition, unlike commonly used configurations, wire mesh407 a positioned between powered electrode 406 and dielectric barrier405, and wire mesh 407 b positioned between grounded electrode 432 anddielectric barrier 405, may allow a plasma to be sustained withoutarcing at a substantially smaller inert gas flow rate (less than about 1slm) than is commonly required (e.g., about 10 slm, etc.). Generally, aninert gas 418 and a process gas 416 are flowed into sealed box 414 forpressurizing. The gases are, in turn, feed into a discharge chambercavity 410 through gas influent 415, at which point plasma is struckwith an RF power source 408 and creates plasma effluent 404 fromdischarge orifice 417 at one end of cavity 410, in order to cleansubstrate 402. In addition, although each electrode is configured with awire mesh in this embodiment, other embodiments may comprise only asingle wire mesh on either powered electrode 406 or grounded electrode432. In embodiment, diameter 431 is about between 0.5 mm and about 6 mm.Advantages of this embodiment include the ability to generate a plasmajet that substantially removes edge polymer byproducts with a relativelysmall inert gas flow rate (less than about 1 slm), avoiding the cost ofobtaining a large volume of a semi-conductor grade inert gas, or inpurchasing expensive inert gas recycling equipment.

Referring now to FIG. 5, a simplified diagram of a DWM-APPJ device isshown, in which a powered electrode is configured as a center rod and aground electrode(s) is configured on a cavity inner surface, accordingto an embodiment of the invention. In addition, unlike the prior art, awire mesh 507 b positioned between powered electrode 506 b anddielectric barrier 505 b, and wire mesh 507 a is positioned betweengrounded electrode 532 a-b and dielectric barrier 505 a, may allow aplasma to be sustained without arcing at a substantially smaller inertgas flow rate (less than about 1 slm) than is commonly required (e.g.,about 10 slm, etc.). As before, generally, an inert gas 518 and aprocess gas 516 are flowed into sealed box 514 for pressurizing. Thegases are, in turn, feed into a discharge chamber cavity 510 through gasinfluent 515, at which point a plasma is struck with an rf power source508 and creates plasma effluent 504 from discharge orifice 517 at oneend of cavity 510 to etch or clean substrate 502. In embodiment,diameter 531 is about between 0.5 mm and about 6 mm. Advantages of thisembodiment include the ability to generate a plasma jet thatsubstantially removes edge polymer byproducts with a relatively smallinert gas flow rate (less than about 1 slm), avoiding the cost ofobtaining a large volume of a semi-conductor grade inert gas, or inpurchasing expensive inert gas recycling equipment.

For example, using a DWM-APPJ device in order to remove bevel edgepolymer, at a power setting of 1-20 W RF power, and a frequency of about2 MHz to about 13.56 MHz, less than 1 slm of He flow may be required toprevent arcing with about 100 sccm to about 500 sccm of O₂ flow. This issubstantially less than about 10 slm of He normally required for acomparable operation with a commonly used APPJ device.

Referring now to FIG. 6, a simplified diagram of a set of DWM-APPJdevices, as described in FIG. 5, is shown according to an embodiment ofthe invention. In this embodiment, each DWM-APPJ device is posited onthe longitudinal axis, with DWM-APPJ 601 positioned to remove polymerbyproducts from surface of the substrate that faces a plasma, also knownas the planar front side, and DWM-APPJ 602 positioned to remove polymerbyproducts from surface of the substrate that faces the chuck, alsoknown as the planar back side. By simultaneously removing edge polymers,the substrate processing time is reduced by about 50%, increasingmanufacturing throughput.

Referring now to FIG. 7, a simplified diagram of a set of DWM-APPJdevices, as described in FIG. 6, is shown with an additional set ofinert gas jets, according to an embodiment of the invention. In thisconfiguration, the set of inert gas jets 718 may be posited to push anyvolatile byproducts produced by DWM-APPJ devices 601 and 602 away fromsubstrate 502, in order to substantially reduce any furthercontamination of the substrate surface.

Referring now to FIG. 8, a simplified diagram of a DWM-APPJ device, inwhich a set of wire mesh-dielectric sleeves is changeable, is shown,according to an embodiment of the invention. As previously described, anrf field may be attenuated in different amounts and to different degreesby altering diameter of the wire mesh holes. Hence, allowing variouswire mesh-dielectric sleeves 805 a and 805 b, each with different wiremesh hole diameter, may allow the DWM-APPJ device to be optimized for aparticular configuration or recipe. That is, each wire mesh-dielectricsleeve 805 a and 805 b is positioned in the DWM-APPJ between theappropriate electrode and a plasma in order to minimize arcing. In anembodiment, 805 a and 805 b have the same hole diameter, for any givenconfiguration. In an embodiment, 805 a and 805 b have different holediameters for any given configuration.

In an embodiment, a wire mesh layer is sandwiched between two dielectriclayers. In an embodiment, a wire mesh layer is bonded to a dielectriclayer with an adhesive, such as a silicon adhesive. In an embodiment, awire mesh layer is secured to a dielectric layer using a pressure force(along a lateral axis). In an embodiment, a wire mesh layer is securedto a dielectric layer using a friction force (along a longitudinalaxis). In an embodiment, a wire mesh-dielectric sleeve is secured to anelectrode using a pressure force (along a lateral axis). In anembodiment, a wire mesh-dielectric sleeve is secured to a dielectriclayer using a friction force (along a longitudinal axis).

For example, decreasing the flow rate of an inert gas would generallyincrease the likelihood of arcing for a given configuration (e.g.,process gas flow rate, process gas type, rf power, etc.). However,inserting a set of wire mesh sleeves each with a smaller hole diametermay sustain the plasma at the lower inert gas flow rate without arcing.In addition, different wire mesh materials (e.g., composite metals,platinum, etc.) may also be used, without having to redesign theDWM-APPJ device.

Referring now to FIG. 9, a simplified method of optimally removing aedge polymer from a substrate with a DWM-APPJ device is shown, accordingto an embodiment of the invention. Initially, at 902, a poweredelectrode assembly, including a powered electrode, a wire mesh, and adielectric layer is provided. In an embodiment, the wire mesh mayinclude one of copper, stainless steel, brass, and galvanized metal. Inan embodiment, the dielectric layer may include one of silicon dioxide,silicon nitride, boPET (such as MYLAR™), ceramic, or PTFE (such asTEFLON™). Next, at 904, a grounded electrode assembly is disposedopposite the powered electrode assembly so as to form a cavity whereinthe plasma is generated. In an embodiment, the cavity may be an annularvolume. In an embodiment, the powered electrode is a longitudinal probeconfigured in the cavity. The cavity may have a diameter that is atleast as large as the diameter of the substrate (see FIG. 4 substrate402 a). Next, at 906, an RF field is applied to the cavity using thepowered electrode to generate the plasma from at least one inert gas andthe at least one process gas.

This invention is substantially distinguished from the prior art inseveral respects. For example, this combines at least one dielectricbarrier and at least one wire mesh with an APPJ (DWM-APPJ) in order togenerate a plasma jet that substantially removes edge polymer byproductswith a relatively small inert gas flow rate (less than about 1 slm). Inaddition, unlike common and more complex APPJ device configurations,this invention does not reduce arcing through the use of slots, highflow velocities, and/or an alumina cap. Furthermore, this invention doesnot require any specialized and/or equipment to maintain a vacuum, doesnot physically contact to the substrate minimizing the likelihood of adamaging scratch, and is relatively easy to integrate into existingprocesses because of the minimal equipment requirements.

While this invention has been described in terms of several preferredembodiments, there are alterations, permutations, and equivalents whichfall within the scope of this invention. For example, although thepresent invention has been described in connection with Lam Researchplasma processing systems (e.g., Exelan™, Exelan™ HP, Exelan™ HPT,2300™, Versys™ Star, etc.), other plasma processing systems may be used.This invention may also be used with substrates of various diameters(e.g., 200 mm, 300 mm, LCD, etc.). Furthermore, the term set as usedherein includes one or more of the named element of the set. Forexample, a set of “X” refers to one or more “X.”

Advantages of the invention include the removal of an edge polymer froma substrate at a relatively low (less than about 1 slm) inert gas flowrate with minimal arcing. Additional advantages include the ability toeasily integrate a DWM-APPJ cleaning device into an in-situ wet cleaningprocess, and the optimization of a substrate manufacturing process.

Having disclosed exemplary embodiments and the best mode, modificationsand variations may be made to the disclosed embodiments while remainingwithin the subject and spirit of the invention as defined by thefollowing claims.

1. A method for removing an edge polymer from a substrate, the methodcomprising: providing a powered electrode; providing a first dielectriclayer; and providing a first wire mesh disposed between said poweredelectrode and said first dielectric layer, said first wire meshsurrounding said powered electrode, said first dielectric layersurrounding said first wire mesh; providing a second dielectric layerdisposed between said first dielectric layer and said power electrode,wherein said first wire mesh is sandwiched between said first dielectriclayer and said second dielectric layer; providing a grounded electrodedisposed above an edge of said substrate, said powered electrode forms acavity and is disposed between two portions of said grounded electrode,said grounded electrode including at least an orifice at one end of saidgrounded electrode for providing plasma to remove said edge polymer;providing an inert gas jet positioned above a location on a surface ofsaid substrate, said location being away from said edge of saidsubstrate, said inert gas jet configured to provide inert gas in adirection to push byproducts produced by said plasma away from saidsubstrate in said direction; introducing at least one inert gas and atleast one process gas into said cavity; and applying an RF field to saidcavity using said powered electrode to generate said plasma from said atleast one inert gas and said at least one process gas.
 2. The method ofclaim 1 further including a second wire mesh disposed between saidgrounded electrode and said second dielectric layer, wherein said secondwire mesh is shielded from said plasma by said second dielectric layerwhen said plasma is present in said cavity.
 3. The method of claim 2,wherein said cavity is an annular volume.
 4. The method of claim 3,wherein said powered electrode is a longitudinal probe configured insaid cavity.
 5. The method of claim 4, wherein said cavity has a cavitydiameter along a lateral axis, wherein said cavity diameter is at leastas large as a substrate diameter.
 6. The method of claim 5, wherein atleast one of said first dielectric layer and said second dielectriclayer is one of silicon dioxide, silicon nitride, and ceramic.
 7. Themethod of claim 6, wherein at least one of said first wire mesh and saidsecond wire mesh are one of copper, stainless steel, brass, andgalvanized metal.
 8. The method of claim 7, wherein at least one of saidfirst wire mesh and said second wire mesh are configured as one of amonofilament, a rectangular weave, and a hexagon weave.
 9. The method ofclaim 2, wherein said first wire mesh is configured for operating theapparatus with a first recipe and is configured to be replaced with asecond wire mesh for operating the apparatus with a second recipe. 10.The method of claim 1 further comprising a power source, wherein adiameter of each hole of said first wire mesh is less than a wavelengthof a signal provided by said power source.
 11. The method of claim 1further comprising a power source, wherein each surface variation ofsaid first wire mesh is less than a wavelength of a signal provided bysaid power source.
 12. The method of claim 1 wherein said inert gas jetpositioned is positioned away from said powered electrode and saidgrounded electrode, and said inert gas is not provided through saidgrounded electrode.
 13. The method of claim 1 further comprising: asecond powered electrode; a third dielectric layer; said second wiremesh disposed between said second powered electrode and said thirddielectric layer; and a second grounded electrode disposed opposite tosaid grounded electrode and disposed under said edge of said substrate,said second powered electrode disposed between two portions of saidsecond grounded electrode, said second powered electrode and said secondgrounded electrode configured to generate second plasma, said secondplasma configured to protrude from said second grounded electrode toreach said substrate, wherein said powered electrode assembly and saidsecond powered electrode assembly are disposed at different sides withrespect to said substrate.
 14. A method for removing one or more polymerdeposits from a substrate, the method comprising: providing a firstgrounded electrode disposed above an edge of said substrate; said firstgrounded electrode forming a first cavity; providing a first plasmaconfigured to be generated in said first cavity, said first plasmaconfigured to protrude from said first cavity to reach a first side ofsaid substrate; providing a first powered electrode, wherein at least aportion of said first powered electrode is disposed in said firstcavity; providing a first dielectric barrier in said first cavity andsurrounding said portion of said first powered electrode; providing afirst wire mesh disposed between said first dielectric barrier and saidportion of said first powered electrode, said first wire meshsurrounding said portion of said first powered electrode, said firstdielectric barrier surrounding said first wire mesh; providing a seconddielectric barrier disposed between said first dielectric barrier andsaid portion of said first powered electrode, wherein said first wiremesh is sandwiched between said first dielectric barrier and said seconddielectric barrier; and providing a first inert gas jet positioned abovea location on a surface of said substrate, said location being away fromsaid edge, said first gas jet configured to provide inert gas in adirection to push byproducts produced by said plasma away from saidsubstrate in said direction; introducing at least one inert gas and atleast one process gas into said first cavity; and applying an RF fieldto said first cavity using said powered electrode to generate saidplasma from at least one inert gas and said at least one process gas.15. The method of claim 14, wherein said first wire mesh is bonded tosaid first dielectric barrier.
 16. The method of claim 15 wherein saidfirst inert gas jet is positioned away from said first powered electrodeand said first grounded electrode, and said inert gas is not providedthrough said first grounded electrode.
 17. The method of claim 14further comprising: providing a second grounded electrode, said secondgrounded electrode forming a second cavity, providing a second plasmaconfigured to be generated in said second cavity, said second plasmaconfigured to protrude from said second cavity to reach a second side ofsaid substrate, said second side of said substrate opposite to saidfirst side of said substrate; providing a second powered electrode, atleast a portion of said second powered electrode is disposed in saidsecond cavity; a third dielectric barrier disposed in said second cavityand surrounding said portion of said second powered electrode; and asecond wire mesh disposed between said third dielectric barrier and saidportion of said second powered electrode.
 18. The method of claim 17further comprising: providing a fourth dielectric barrier disposedbetween said third dielectric barrier and said portion of said secondpowered electrode, wherein said second wire mesh is sandwiched betweensaid third dielectric barrier and said fourth dielectric barrier.